Schottky / Schottky-Bardeen metal/semicoductor contact.intra-band and Schottky barrier tunneling through spikes in the conduction and valence bands at interfaces ( new in v2.5).no interface / drift diffusion interface.coherent or incoherent multiple reflection.Lambert-Beer Absorption with multiple passes through the layer stack ( new in v2.4.1).calculation of I-V curves according to 1-diode model ( new in v2.4.1).Transient photo electro luminescence, TR-PEL TR measurements transient surface photovoltage decay, TR-SPV.Quasi steady state photoconductance QSS-PC Quasi steady state surface photovoltage SPV Simulation of various measurement techniques:.Simulation of internal cell parameters:Д«and diagram, local cell currents, recombination, phase shifts.Arbitrary parameter variations and parameter fitting.Equilibrium EQ, steady-state DC, small sinusoidal pertubation AC and general transient TR calculation mode.Modelling of an arbitrary 1D sequence of semiconducting layers and interfaces.

вЂњInvestigation of Selective Junctions Using a Newly Developed Tunnel Current Model for Solar Cell Applications.вЂќ Solar Energy Materials and Solar Cells 141 (2015) 14вЂ“23. When publishing work that includes the results of AFOES-HET simulations, the following reference should be cited: Automatisch generierte Inhalte einfГјgen (ger).The most important content elements at a glance.Supplement to the data protection declaration.Friends of Helmholtz-Zentrum Berlin e.V.BER II: Dialogue on the path to dismantling.Zutritt fГјr Fremdfirmen, GГ¤ste und Besucher (ger).

Diffusion pc1d